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Brand Name : zmsh
Place of Origin : China
Model Number : 12'' Dia 250mm±0.5mm Thickness 1000 Um
Certification : rohs
MOQ : 3
Price : 80
Payment Terms : T/T, Western Union
Supply Ability : 1000per month
Delivery Time : 5-6 weeks
Packaging Details : Foam cushion wafer carrier + Carton box
Orientation : C-plane <0001>
Diameter : 300mm±0.5mm
Thickness : 1000um±50um
Material : Sapphire Crystal
Polished : SSP or DSP
TTV : <15um
Bow : <50um
12" Sapphire Wafer 250mm Diameter (±0.5mm) 1000µm Thickness C-Plane
This 12-inch (250mm) sapphire wafer delivers industry-leading precision (±0.5mm diameter, 1,000µm thickness) and ultra-high purity (99.99%), optimized for advanced semiconductor and optoelectronic applications. The C-plane (0001) orientation ensures exceptional epitaxial growth quality for GaN-based devices, while its large diameter maximizes production efficiency for high-volume manufacturing. With superior thermal stability (>2,000°C melting point), optical transparency (85%+ from UV to mid-IR), and mechanical robustness (9 Mohs hardness), this wafer is ideal for power electronics, LEDs, laser systems, and cutting-edge quantum technologies.
Key Features of Sapphire Wafer
Sapphire Wafer's Large-Format Precision:
Diameter: 250mm ±0.5mm, compatible with 12" semiconductor fabrication lines.
Thickness: 1,000µm ±15µm, engineered for mechanical strength and process uniformity.
Sapphire Wafer's Ultra-High Purity (4N):
99.99% pure Al₂O₃, eliminating impurities that degrade optical/electrical performance.
Sapphire Wafer's Exceptional Material Properties:
Thermal Stability: Melting point ~2,050°C, suitable for extreme environments.
Optical Clarity: >85% transmission from 350nm to 4,500nm (UV to mid-IR).
Hardness: 9 Mohs, resistant to scratches and chemical corrosion.
Sapphire Wafer's Surface Quality Options:
Epi-ready polish: Ra <0.3nm (AFM-measured), ideal for thin-film deposition.
Double-side polishing available for precision optical applications.
Applications of Sapphire Wafer
Sapphire Wafer in Advanced Optoelectronics:
GaN-based LEDs/Laser Diodes: Blue/UV LEDs, VCSELs for LiDAR and 3D sensing.
Micro-LED Displays: Uniform substrates for next-gen AR/VR screens.
Sapphire Wafer in Power & RF Devices:
5G/6G Power Amplifiers: Low dielectric loss at high frequencies.
HEMTs and MOSFETs: High-voltage transistors for electric vehicles.
Sapphire Wafer in Industrial & Defense:
IR Windows/Missile Domes: Transparency in harsh environments (e.g., aerospace).
Sapphire Sensors: Corrosion-resistant covers for industrial monitoring.
Sapphire Wafer in Emerging Technologies:
Wearable Tech: Ultra-durable cover glass for smartwatches.
Specifications
Parameter | Value |
---|---|
Diameter | 250mm ±0.5mm |
Thickness | 1,000µm ±15µm |
Orientation | C-plane (0001) ±0.2° |
Purity | >99.99% (4N) |
Surface Roughness (Ra) | <0.3nm (epi-ready) |
TTV | <15µm |
Bow | <50um |
Factory Equipments
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Sapphire Wafer 12'' Dia 250mm±0.5mm Thickness 1000 Um C-Plane DSP Images |